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NTHS2101P
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain?to?Source Breakdown Voltage (Note 2)
V (Br)DSS
V GS = 0 V dc , I D = ?250 m A dc
?8.0
V dc
Temperature Coefficient (Positive)
Gate?Body Leakage Current Zero
Zero Gate Voltage Drain Current
I GSS
I DSS
V DS = 0 V dc , V GS = " 8.0 V dc
V DS = ?6.4 V dc , V GS = 0 V dc
" 100
?1.0
nA dc
m A dc
ON CHARACTERISTICS (Note 2)
V DS = ?6.4 V dc , V GS = 0 V dc ,
T J = 85 ° C
?5.0
Gate Threshold Voltage
Static Drain?to?Source On?Resistance
V GS(th)
R DS(on)
V DS = V GS , I D = ?250 m A dc
V GS = ?4.5 V dc , I D = ?5.4 A dc
?0.45
19
?1.5
25
V dc
m W
V GS = ?2.5 V dc , I D = ?4.5 A dc
V GS = ?1.8 V dc , I D = ?2.0 A dc
25
34
36
48
Forward Transconductance
g FS
V DS = ?5.0 V dc , I D = ?5.2 A dc
20
S
Diode Forward Voltage
V SD
I S = ?1.1 A dc , V GS = 0 V dc
?0.62
?1.2
V
DYNAMIC CHARACTERISTIC
Input Capacitance
Output Capacitance
Transfer Capacitance
C iss
C oss
C rss
V DS = ?6.4 V dc
V GS = 0 V
f = 1.0 MHz
2400
550
420
pF
SWITCHING CHARACTERISTICS (Note 3)
Turn?On Delay Time
Rise Time
Turn?Off Delay Time
Fall Time
t d(on)
t r
t d(off)
t f
V DD = ?6.4 V dc
V GS = ?4.5 V dc
I D = ?5.4 A dc
R G = 2.0 W (Note 2)
7.0
28
73
60
ns
Gate Charge
Q G
V GS = ?4.5 V dc
15
30
nC
Q GS
Q GD
I D = ?5.4 A dc
V DS = ?6.4 V dc
4.0
8.0
Source?Drain Reverse Recovery Time
T rr
I F = ?1.1 A, di/dt = 100 A/ m s
90
ns
2. Pulse Test: Pulse Width = 250 m s, Duty Cycle = 2%.
3. Switching characteristics are independent of operating junction temperatures.
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